类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 45A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 24.6mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 3120 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 114W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSP603S2LNTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4296Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13.5A 8SOIC |
|
TK11A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11A TO220SIS |
|
DMN30H4D0LFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 550MA 6UDFN |
|
FQB9N50CFTMRochester Electronics |
MOSFET N-CH 500V 9A D2PAK |
|
SPD30N03S2L-20GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH6321-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A 6MCPH |
|
STI11NM80STMicroelectronics |
MOSFET N-CH 800V 11A I2PAK |
|
IPC50N04S55R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A 8TDSON-33 |
|
RCX510N25ROHM Semiconductor |
MOSFET N-CH 250V 51A TO-220FM |
|
IPA057N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 60A TO220-3-31 |
|
SSP1N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDH047AN08A0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 8 |