English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 205mOhm @ 500mA, 8V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.959 nC @ 4.5 V |
| vgs (最大值): | -12V |
| 输入电容 (ciss) (max) @ vds: | 198 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-PICOSTAR |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RRF015P03TLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
|
STF33N60DM2STMicroelectronics |
MOSFET N-CH 650V 24A TO220FP |
|
TSM2312CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
|
TSM150P03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 36A 8PDFN |
|
IRFR2407PBFRochester Electronics |
MOSFET N-CH 75V 42A DPAK |
|
SFT1350-HRochester Electronics |
MOSFET P-CH 40V 19A TP |
|
IXFN90N170SKWickmann / Littelfuse |
SICFET N-CH 1700V 90A SOT227B |
|
FQP2N40-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO220-3 |
|
SIR680DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 100A PPAK SO-8 |
|
5HN01SS-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SSFP3 |
|
RM1A4N150S6Rectron USA |
MOSFET N-CH 150V 1.4A SOT23-6 |
|
MSC70SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 89A SOT227 |
|
FDB6670ASRochester Electronics |
MOSFET N-CH 30V 62A TO263AB |
