类型 | 描述 |
---|---|
系列: | POWER MOS 7® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 46A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 100mOhm @ 23A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4360 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 520W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | T-MAX™ [B2] |
包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NDS335NRochester Electronics |
MOSFET N-CH 20V 1.7A SUPERSOT3 |
|
TN2524N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 360MA TO243AA |
|
IXFP30N25X3MWickmann / Littelfuse |
MOSFET N-CH 250V 30A TO220 |
|
CSD17381F4TTexas Instruments |
MOSFET N-CH 30V 3.1A 3PICOSTAR |
|
IRFZ44NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A D2PAK |
|
IPP065N04N GRochester Electronics |
MOSFET N-CH 40V 50A TO220-3 |
|
FQB8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 8A D2PAK |
|
STP10N105K5STMicroelectronics |
MOSFET N-CH 1050V 6A TO220 |
|
FQPF2NA90Rochester Electronics |
MOSFET N-CH 900V 1.7A TO220F |
|
IRF9Z34PBFVishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |
|
IXFB132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 132A PLUS264 |
|
FQA70N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 70A TO3PN |
|
NTF3055-160T3Rochester Electronics |
N-CHANNEL POWER MOSFET |