类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 74A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 9.3mOhm @ 37A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.4 pF @ 24 V |
场效应管特征: | - |
功耗(最大值): | 80W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTA1R6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO263 |
|
FQI16N25CTURochester Electronics |
MOSFET N-CH 250V 15.6A I2PAK |
|
RE1C001UNTCLROHM Semiconductor |
MOSFET N-CH 20V 100MA EMT3F |
|
SSM3K56ACT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 1.4A CST3 |
|
IRF9540NSTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A D2PAK |
|
IRFI634GPBFVishay / Siliconix |
MOSFET N-CH 250V 5.6A TO220-3 |
|
IPW90R800C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PH3120L,115-NXPRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SQM120N02-1M3L_GE3Vishay / Siliconix |
MOSFET N-CH 20V 120A TO263 |
|
SI7414DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 5.6A PPAK1212-8 |
|
FCP600N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A TO220-3 |
|
CSD19534KCSTexas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
|
SCH2080KECROHM Semiconductor |
SICFET N-CH 1200V 40A TO247 |