类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFS7730PBFRochester Electronics |
IRFS7730 - 12V-300V N-CHANNEL PO |
|
NTR4503NT1Rochester Electronics |
MOSFET N-CH 30V 1.5A SOT23-3 |
|
RM120N30DFRectron USA |
MOSFET N-CHANNEL 30V 120A 8DFN |
|
APT6029BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 21A TO247 |
|
IXTK200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A TO264 |
|
FCH130N60Rochester Electronics |
MOSFET N-CH 600V 28A TO247-3 |
|
TK42E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 88A TO-220 |
|
RFP12N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A TO220-3 |
|
IXTA4N70X2Wickmann / Littelfuse |
MOSFET N-CH 700V 4A TO263 |
|
CSD17309Q3Texas Instruments |
MOSFET N-CH 30V 20A/60A 8VSON |
|
SI4420DYPBFRochester Electronics |
MOSFET N-CH 30V 12.5A 8SO |
|
NTMYS8D0N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/49A 4LFPAK |
|
SQD25N06-22L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 25A TO252 |