类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 22mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1975 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 62W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HUF76143S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQAF19N20LRochester Electronics |
MOSFET N-CH 200V 16A TO3PF |
|
IPW60R041C6Rochester Electronics |
600V, 0.041OHM, N-CHANNEL MOSFET |
|
2SK4099LSRochester Electronics |
MOSFET N-CH 600V 6.9A TO220FI |
|
IRF740LCPBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 10A TO220AB |
|
RM2304Rectron USA |
MOSFET N-CHANNEL 30V 3.6A SOT23 |
|
AUIRFR2307ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SCT3030AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 70A TO263-7 |
|
BSL202SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
NVMFS5826NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
VN2222LL-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
BSS84PH6433XTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
IRF830ASPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |