English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VN2222LL-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
BSS84PH6433XTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
IRF830ASPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
|
BSS138NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
APT23F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
MTB60N10E7LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC050N03MSGATMA1Rochester Electronics |
PFET, 16A I(D), 30V, 0.0063OHM, |
|
IRFR3303TRPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
CSD23381F4Texas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
SIHW30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AD |
|
IRF6810STRPBFRochester Electronics |
PFET, 16A I(D), 25V, 0.0052OHM, |
|
IXFK240N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 240A TO264 |
|
IRFZ44ESPBFRochester Electronics |
HEXFET POWER MOSFET |
