RES SMD 4.7K OHM 1% 1/4W 1206
MOSFET N-CH 650V 33A TO220
CBL FMALE TO MALE 12POS 16.4'
类型 | 描述 |
---|---|
系列: | MDmesh™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 91mOhm @ 16.5A, 10V |
vgs(th) (最大值) @ id: | 4.75V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 52.5 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2300 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZXM62P02E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.3A SOT23-6 |
|
BUK9245-55A/C1118Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRLR014NTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
MTB3N60ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTP50N25TWickmann / Littelfuse |
MOSFET N-CH 250V 50A TO220AB |
|
SQD100N04-3M6_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
AO3403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
BUK7528-100A,127Rochester Electronics |
PFET, 47A I(D), 100V, 0.028OHM, |
|
TK3A65DA(STA4,QM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2.5A TO220SIS |
|
BSZ058N03MSGRochester Electronics |
BSZ058N03 - 12V-300V N-CHANNEL P |
|
IXTA02N250HVWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO263AB |
|
SUD20N10-66L-BE3Vishay / Siliconix |
MOSFET N-CH 100V 16.9A DPAK |
|
IRFU014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |