English
简体中文
FIXED IND 2.2UH 2.3A 20.5MOHM SM
MOSFET N-CH 300V 36A TO263AA
RELAY RF SPDT 10MA 12V
DIODE GEN PURP 600V 5A DO215AB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, Polar3™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2040 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 347W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263AA |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD18531Q5ATexas Instruments |
MOSFET N-CH 60V 19A/100A 8VSON |
|
BUK9M6R7-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
BUK9Y11-80EXNexperia |
MOSFET N-CH 80V 84A LFPAK56 |
|
IPD80R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
|
SIR510DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 100 V (D-S) MOSFET POW |
|
NTMFS4931NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A/246A 5DFN |
|
IPA60R950C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO220-FP |
|
FQB19N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 21A D2PAK |
|
FDW264PRochester Electronics |
MOSFET P-CH 20V 9.7A 8TSSOP |
|
RQ5A040ZPTLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
|
HUF76009P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1334-TL-HRochester Electronics |
MOSFET P-CH 12V 1.6A 6SCH |
|
AOD444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4A/12A TO252 |