English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17.1A (Ta), 46.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1320 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | V-DFN3030-8 |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMBF2202PT1Rochester Electronics |
MOSFET P-CH 20V 300MA SC70-3 |
|
IPD80R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO252-3 |
|
NVD3055L170T4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
STP20N60M2-EPSTMicroelectronics |
MOSFET N-CHANNEL 600V 13A TO220 |
|
IRFS7530TRLPBFIR (Infineon Technologies) |
MOSFET N CH 60V 195A D2PAK |
|
DMN61D9UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 340MA SOT323 |
|
PSMN2R6-60PS127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3103STRLPBFRochester Electronics |
IRL3103 - HEXFET POWER MOSFET |
|
NVMFS5C612NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
PMZB790SN,315Rochester Electronics |
MOSFET N-CH 60V 650MA DFN1006B-3 |
|
IRF7855PBFRochester Electronics |
MOSFET N-CH 60V 12A 8SO |
|
FQI3N30TURochester Electronics |
MOSFET N-CH 300V 3.2A I2PAK |
|
BSS169L6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
