类型 | 描述 |
---|---|
系列: | CoolMOS™ CFD2 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 22.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 9.3A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 900µA |
栅极电荷 (qg) (max) @ vgs: | 86 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2340 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 195.3W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTGS4141NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.5A 6TSOP |
|
IPB039N10N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 160A TO263-7 |
|
IPP100N10S305AKSA1Rochester Electronics |
MOSFET N-CH 100V 100A TO220-3-1 |
|
STD4N90K5STMicroelectronics |
MOSFET N-CH 900V 3A DPAK |
|
STL19N65M5STMicroelectronics |
MOSFET N-CH 650V 12.5A POWERFLAT |
|
SPP80N03S2-03Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
BTS132E3045ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ407EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
BSC030N03MSGRochester Electronics |
BSC030N03 - 12V-300V N-CHANNEL P |
|
SUP90220E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 64A TO220AB |
|
SSM3K361R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 3.5A SOT-23F |
|
IXFA80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO263AA |
|
NVMYS021N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.8A/27A 4LFPAK |