English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.4mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7.02 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BTS132E3045ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ407EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
BSC030N03MSGRochester Electronics |
BSC030N03 - 12V-300V N-CHANNEL P |
|
SUP90220E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 64A TO220AB |
|
SSM3K361R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 3.5A SOT-23F |
|
IXFA80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO263AA |
|
NVMYS021N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.8A/27A 4LFPAK |
|
FDD86381-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 25A DPAK |
|
TPIC1301DWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD320N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A TO252-3 |
|
MCH6336-TL-E-ONRochester Electronics |
MOSFET P-CH 12V 5A SC88FL/ MCPH6 |
|
NTMFS4C08NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/52A 5DFN |
|
AOI2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO251A |
