MOSFET N-CH 20V 1.4A SOT363-6
SWITCHING REGLTR, VOLTAGE-MODE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 1.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 160mOhm @ 1.4A, 2.5V |
vgs(th) (最大值) @ id: | 950mV @ 3.7µA |
栅极电荷 (qg) (max) @ vgs: | 600 pC @ 2.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 180 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 500mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-SOT363-6 |
包/箱: | 6-VSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN015-100B,118Nexperia |
MOSFET N-CH 100V 75A D2PAK |
|
2SK3746-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1500V 2A TO3P-3L |
|
DMN601WK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
PMZB600UNELYLNexperia |
MOSFET N-CH 20V 600MA DFN1006B-3 |
|
FDB3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A D2PAK |
|
CPH6434-TL-ERochester Electronics |
MOSFET N-CH 30V 6A 6CPH |
|
RD3P100SNFRATLROHM Semiconductor |
MOSFET N-CH 100V 10A TO252 |
|
FDD5810Rochester Electronics |
MOSFET N-CH 60V 7.4A/37A DPAK |
|
PSMN059-150Y,115Nexperia |
MOSFET N-CH 150V 43A LFPAK56 |
|
SQ2308CES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |