English
简体中文
RES 3.6K OHM 1/2W 5% CF MINI
CAP ALUM 150UF 20% 250V RADIAL
MOSFET N-CH 525V 6A DPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | π-MOSVII |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 525 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.3Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4.4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB120N06S4H1ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
IPP60R280CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
STB20NM60DSTMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
|
NVLUS4C12NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 6UDFN |
|
NTMFS4744NT3GRochester Electronics |
MOSFET N-CH 30V 7A 5DFN |
|
AUIRFS8407-7TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
RM3416Rectron USA |
MOSFET N-CHANNEL 20V 6.5A SOT23 |
|
IPS60R650CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
DMN3025LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 25A POWERDI3333 |
|
SI4466DYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NVMFS5C680NLWFT1GRochester Electronics |
MOSFET N-CH 60V 8.1A/21A 5DFN |
|
APT31M100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 32A TO264 |
|
ZXMN3F30FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.8A SOT23-3 |