RES 100K OHM 5% 2W AXIAL
MOSFET N-CH 40V 62.5A/100A PPAK
DC DC CONVERTER 6.5V 400W
IC REG LINEAR 1.45V 300MA SOT25
类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 62.5A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 194 nC @ 10 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 8445 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 6.25W (Ta), 100W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTP5864NGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 63A TO220AB |
|
SIHB22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A D2PAK |
|
FDS3580Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7.6A 8SOIC |
|
FQP4N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3.9A TO220-3 |
|
FDMC6686PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 18A/56A 8PQFN |
|
TK7R4A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IRFB9N60APBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A TO220AB |
|
PSMN1R3-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRL1404SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
2N7002ADiotec Semiconductor |
MOSFET N-CH 60V 280MA SOT23-3 |
|
IRLHM620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 26A/40A PQFN |
|
DMG3402LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
FDP3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 105V 5.9A/41A TO220 |