English
简体中文
RES 332K OHM 1% 0.6W AXIAL
RES 150 OHM 7W 1% WW AXIAL
MOSFET N-CH 600V 21A D2PAK
DC DC CONVERTER 5.8V 200W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 86 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1920 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 227W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS3580Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7.6A 8SOIC |
|
FQP4N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3.9A TO220-3 |
|
FDMC6686PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 18A/56A 8PQFN |
|
TK7R4A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IRFB9N60APBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A TO220AB |
|
PSMN1R3-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRL1404SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
2N7002ADiotec Semiconductor |
MOSFET N-CH 60V 280MA SOT23-3 |
|
IRLHM620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 26A/40A PQFN |
|
DMG3402LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
FDP3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 105V 5.9A/41A TO220 |
|
SI8401DB-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 4MICROFOOT |
|
FDS6680Rochester Electronics |
MOSFET N-CH 30V 11.5A 8SOIC |