MOSFET N-CH 500V 57A TO264
SMA-RJB/BNC-SJB G142 1M
类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 57A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 75mOhm @ 28.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 125 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 5590 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-264 [L] |
包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PHD71NQ03LT,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
IRFS4610TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 73A D2PAK |
|
IPA80R460CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 5A TO220 |
|
IPB180N04S302ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A D2PAK |
|
CTLDM7590 TRCentral Semiconductor |
MOSFET P-CH 20V 140MA TLM3D6D8 |
|
SISS10ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 31.7A/109A PPAK |
|
SQM120N10-09_GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263 |
|
NTD4909N-1GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A IPAK |
|
IRFP260MPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 50A TO247AC |
|
2SJ661-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO263-2 |
|
PSMN2R1-40PLQNexperia |
MOSFET N-CH 40V 150A TO220AB |
|
TPH4R606NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 32A 8SOP |
|
CSD19538Q2TTexas Instruments |
MOSFET N-CH 100V 13.1A 6WSON |