







CRYSTAL 40.0000MHZ 8PF SMD
MOSFET N-CH 30V 16.3A/64A 8WDFN
MOSFET N-CH 100V 120A TO263
.050 SOCKET DISCRETE CABLE ASSEM
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8645 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D²Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NTD4909N-1GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A IPAK |
|
|
IRFP260MPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 50A TO247AC |
|
|
2SJ661-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A TO263-2 |
|
|
PSMN2R1-40PLQNexperia |
MOSFET N-CH 40V 150A TO220AB |
|
|
TPH4R606NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 32A 8SOP |
|
|
CSD19538Q2TTexas Instruments |
MOSFET N-CH 100V 13.1A 6WSON |
|
|
FKI10300Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 23A TO220F |
|
|
BUK9Y7R6-40E,115Nexperia |
MOSFET N-CH 40V 79A LFPAK56 |
|
|
ZVN4210ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 450MA E-LINE |
|
|
IXTH24N50LWickmann / Littelfuse |
MOSFET N-CH 500V 24A TO247 |
|
|
RSR030N06HZGTLROHM Semiconductor |
MOSFET N-CH 60V 3A TSMT3 |
|
|
TN5325N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 316MA TO243AA |
|
|
DMNH6042SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 24A PWRDI5060-8 |