类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 20V |
rds on (max) @ id, vgs: | 300mOhm @ 500mA, 20V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 160 nC @ 20 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 400W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 (IXTH) |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSR030N06HZGTLROHM Semiconductor |
MOSFET N-CH 60V 3A TSMT3 |
|
TN5325N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 316MA TO243AA |
|
DMNH6042SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 24A PWRDI5060-8 |
|
R6509ENJTLROHM Semiconductor |
MOSFET N-CH 650V 9A LPTS |
|
BSS192PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 190MA SOT89 |
|
IRFI9540GPBFVishay / Siliconix |
MOSFET P-CH 100V 11A TO220-3 |
|
CMS40N03V8-HFComchip Technology |
MOSFET N-CH 30V 25A/40A 8PDFN |
|
PMPB47XP,115Nexperia |
MOSFET P-CH 30V 4A DFN2020MD-6 |
|
DMP4010SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 15A/50A TO252 |
|
FQP6N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 5.5A TO220-3 |
|
SIHG21N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 21A TO247AC |
|
DMN63D8L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT23 |
|
TSM70N380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A TO251 |