类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 18mOhm @ 7A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 2.24 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 700mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-WDFN (2x2) |
包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP5N30Rochester Electronics |
MOSFET N-CH 300V 5.4A TO220-3 |
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
2N7002KW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-323 |
|
FQAF44N10Rochester Electronics |
MOSFET N-CH 100V 33A TO3PF |
|
FDS6299SRochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
TK6P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.8A DPAK |
|
NTB6411ANGRochester Electronics |
MOSFET N-CH 100V 77A D2PAK |
|
SI5419DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |
|
SQJ486EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 75V 30A PPAK SO-8 |
|
2SK4096LSRochester Electronics |
MOSFET N-CH 500V 7.1A TO220FI |
|
2SK3299B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7655DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |
|
AUIRL1404ZLRochester Electronics |
MOSFET N-CH 40V 160A TO262 |