类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 31mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15.8 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1357 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
G3R75MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-3 |
|
BUK662R7-55C,118Rochester Electronics |
PFET, 120A I(D), 55V, 0.0044OHM, |
|
BUK956R1-100E,127Rochester Electronics |
MOSFET N-CH 100V 120A TO220AB |
|
AUIRFS8408TRRRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQB6N25TMRochester Electronics |
MOSFET N-CH 250V 5.5A D2PAK |
|
IPP60R520C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NTE2935NTE Electronics, Inc. |
MOSFET N-CH 500V 6.2A TO3PML |
|
XPN3R804NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 40A 8TSON |
|
FQI4N20TURochester Electronics |
MOSFET N-CH 200V 3.6A I2PAK |
|
IXTT1N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1A TO268 |
|
PMV28UNEARNexperia |
MOSFET N-CH 20V 4.7A TO236AB |
|
SIUD401ED-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 500MA PPAK 0806 |