English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.3mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-HSMT (3.2x3) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFH120N25TWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO247AD |
|
G2R1000MT33JGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7 |
|
HUFA76429D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
SI7454DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
STP40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220AB |
|
SFT1350-TL-HRochester Electronics |
MOSFET P-CH 40V 19A TP-FA |
|
FDS4080N7Rochester Electronics |
MOSFET N-CH 40V 13A 8SO |
|
SFT1458-TL-HRochester Electronics |
MOSFET N-CH 600V 1A DPAK/TP-FA |
|
SQS401ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8 |
|
CSD23285F5TTexas Instruments |
MOSFET P-CH 12V 5.4A 3PICOSTAR |
|
SI3440ADV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A 6TSOP |
|
2SK3058-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7455DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
