类型 | 描述 |
---|---|
系列: | FemtoFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 5.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 35mOhm @ 1A, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.2 nC @ 4.5 V |
vgs (最大值): | -6V |
输入电容 (ciss) (max) @ vds: | 628 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 500mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 3-PICOSTAR |
包/箱: | 3-SMD, No Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI3440ADV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A 6TSOP |
|
2SK3058-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7455DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
|
IRFF9133Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL POWE |
|
SI1302DL-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
DMN2040UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.7A TSOT26 T&R |
|
STF6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A TO220FP |
|
BSP296NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.2A SOT223-4 |
|
IRF520PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
AUIRF4905STRLIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
SI7820DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 1.7A PPAK1212-8 |
|
IRF3205STRRPBFRochester Electronics |
MOSFET N-CH 55V 110A D2PAK |
|
SI7315DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |