English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 460W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD (IXFH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ44EPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 48A TO220AB |
|
RTL035N03TRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TUMT6 |
|
SQ2309ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 1.7A TO236 |
|
NTB22N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI4062DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 32.1A 8SO |
|
IPB100N06S205ATMA1Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3-2 |
|
PMPB10UPXNexperia |
MOSFET P-CH 12V 10A DFN2020MD-6 |
|
FDA032N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 120A TO3PN |
|
SSW2N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOB600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO263 |
|
R6015KNJTLROHM Semiconductor |
MOSFET N-CH 600V 15A LPTS |
|
FDD6637Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 35V 13A/55A DPAK |
|
IPI100N04S4H2AKSA1Rochester Electronics |
MOSFET N-CH 40V 100A TO262-3 |
