类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 50mOhm @ 3.9A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 9.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 350 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta), 1.66W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTJS4160NT1GRochester Electronics |
MOSFET N-CH 30V 1.8A SC88/SC70-6 |
|
IRF142Rochester Electronics |
25A, 100V, 0.1OHM, N-CHANNEL POW |
|
STL8NH3LLSTMicroelectronics |
MOSFET N-CH 30V 8A POWERFLAT |
|
IPB200N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM085P03CV RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 64A 8PDFN |
|
IRFZ44NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
|
FDD3570Rochester Electronics |
MOSFET N-CH 80V 10A TO252 |
|
NTLJS5D0N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.2A 6PQFN |
|
RSD080N06TLROHM Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
|
IXFK300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A TO264 |
|
BUZ73ALHXKSA1Rochester Electronics |
MOSFET N-CH 200V 5.5A TO220-3 |
|
IRF710STRLPBFVishay / Siliconix |
MOSFET N-CH 400V 2A D2PAK |
|
SPW24N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24.3A TO247-3 |