类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 29mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21.2 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1875 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 62.5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RUL035N02FRATRROHM Semiconductor |
MOSFET N-CH 20V 3.5A TUMT6 |
|
BUK9222-55A/C1,118Rochester Electronics |
MOSFET N-CH 55V 48A DPAK |
|
STW52NK25ZSTMicroelectronics |
MOSFET N-CH 250V 52A TO247-3 |
|
CSD18536KTTTTexas Instruments |
MOSFET N-CH 60V 200A/349A DDPAK |
|
SIHU6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A IPAK |
|
SI4467DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
TBB1010KMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
FCPF11N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
|
IPA65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL34N65M5STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
|
APT5010LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
|
FK6K02010LPanasonic |
MOSFET N-CH 20V 4.5A WSMINI6 |
|
BSO203SPNTRochester Electronics |
P-CHANNEL POWER MOSFET |