







CRYSTAL 25.0000MHZ 24PF SMD
MOSFET N-CH 60V 200A/349A DDPAK
IC MIXER 400MHZ-2.7GHZ UP 24QFN
CER FILTER 1.95GHZ BAND PASS
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Ta), 349A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.6mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11430 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DDPAK/TO-263-3 |
| 包/箱: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SIHU6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A IPAK |
|
|
SI4467DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
TBB1010KMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
|
FCPF11N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
|
|
IPA65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STL34N65M5STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
|
|
APT5010LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
|
|
FK6K02010LPanasonic |
MOSFET N-CH 20V 4.5A WSMINI6 |
|
|
BSO203SPNTRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
TK17E65W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 17.3A TO220 |
|
|
IPU60R2K0C6BKMA1Rochester Electronics |
MOSFET N-CH 600V 2.4A TO251-3 |
|
|
IPAN70R750P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A TO220 |
|
|
IRF3710STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A D2PAK |