CAP CER 10PF 500V C0G/NP0 2220
DIP SWITCH, SPST, 2.54 PITCH, RA
MOSFET P-CH 20V 4.2A TSOT26
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 45mOhm @ 4.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1575 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSOT-26 |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STL20N6F7STMicroelectronics |
MOSFET N-CH 60V 100A POWERFLAT |
|
RF4L055GNTCRROHM Semiconductor |
MOSFET N-CH 60V 5.5A HUML2020L8 |
|
IPN80R600P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A SOT223 |
|
FSS145-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
STF26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
IXTY1R6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO252 |
|
IRF540PBFVishay / Siliconix |
MOSFET N-CH 100V 28A TO220AB |
|
NVMFS5832NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A 5DFN |
|
VN2450N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 200MA TO92-3 |
|
FDP047N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A TO220-3 |
|
DMT6015LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
AOB66920LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 22.5A/80A TO263 |
|
IXFN56N90PWickmann / Littelfuse |
MOSFET N-CH 900V 56A SOT-227B |