English
简体中文
CRYSTAL 26.0000MHZ 18PF SMD
MEMS OSC XO 106.2500MHZ LVDS SMD
MOSFET N-CH 40V 90A D2PAK
IGW50N60 - DISCRETE IGBT WITHOUT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.1mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 95µA |
| 栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9.43 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFB7440PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220AB |
|
STW26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
|
IRLU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A IPAK |
|
SPP80N03S2L-06Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
STP35N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V TO220 |
|
STF13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
CPH3351-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
HUFA75344S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
IPP12CN10LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 69A TO220-3 |
|
FDS6672ARochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
BSC046N02KSGAUMA1IR (Infineon Technologies) |
MOSFET N-CH 20V 19A/80A TDSON |
|
IPL60R255P6AUMA1Rochester Electronics |
MOSFET N-CH 600V 15.9A 4VSON |
|
BSC060P03NS3EGATMA1Rochester Electronics |
BSC060P03 - 20V-250V P-CHANNEL P |