类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 700 V |
电流 - 连续漏极 (id) @ 25°c: | 8.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 1.8A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 10.5 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 364 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 24.9W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MTSF3N02HDR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
FQD5N50TFRochester Electronics |
MOSFET N-CH 500V 3.5A DPAK |
![]() |
DMNH6012LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 60A TO252-4L |
![]() |
IPU60R600C6BKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO251-3 |
![]() |
PSMN130-200D,118-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
![]() |
BUK9245-55A,118Rochester Electronics |
TRANSISTOR >30MHZ |
![]() |
IPP16CN10LGXKSA1Rochester Electronics |
MOSFET N-CH 100V 54A TO220-3 |
![]() |
FDD9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A DPAK |
![]() |
G3R160MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 21A TO247-3 |
![]() |
BTS282ZE3180ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSS138BKW/DG/B2135Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPL60R199CPAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.4A 4VSON |
![]() |
BSC035N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/100A TDSON |