MOSFET N-CH 600V 7.3A TO251-3
ERC-55-200 4.99K 1% T-2 RNC60H49
类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 7.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 2.4A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 200µA |
栅极电荷 (qg) (max) @ vgs: | 20.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 440 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 63W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO251-3 |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
PSMN130-200D,118-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
![]() |
BUK9245-55A,118Rochester Electronics |
TRANSISTOR >30MHZ |
![]() |
IPP16CN10LGXKSA1Rochester Electronics |
MOSFET N-CH 100V 54A TO220-3 |
![]() |
FDD9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A DPAK |
![]() |
G3R160MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 21A TO247-3 |
![]() |
BTS282ZE3180ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSS138BKW/DG/B2135Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPL60R199CPAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.4A 4VSON |
![]() |
BSC035N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/100A TDSON |
![]() |
NTTFS5C453NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A/107A 8WDFN |
![]() |
FDMS86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8PQFN |
![]() |
APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |
![]() |
RQ1A070APTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |