FIXED IND 2.2UH 2.1A 66.1 MOHM
MOSFET N-CH 40V 23A/107A 8WDFN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Ta), 107A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.3W (Ta), 68W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WDFN (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8PQFN |
|
APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |
|
RQ1A070APTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
CMS61P06CT-HFComchip Technology |
MOSFET P-CH 60V 61A TO220AB |
|
IRF40H210Rochester Electronics |
MOSFET N-CH 40V 100A 8PQFN |
|
NTB150N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A D2PAK-3 |
|
FDMS8558SDCRochester Electronics |
MOSFET N-CH 25V 38A/90A 8PQFN |
|
IRFR024NPBFRochester Electronics |
MOSFET N-CH 55V 17A DPAK |
|
IRFIB6N60APBFVishay / Siliconix |
MOSFET N-CH 600V 5.5A TO220-3 |
|
AUIRF1404STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
NTMFS5C468NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
SIHB21N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 21A D2PAK |
|
STP14NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 13.5A TO220FP |