English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V, 20V |
| rds on (max) @ id, vgs: | 1Ohm @ 2A, 20V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 20 V |
| vgs (最大值): | +22V, -6V |
| 输入电容 (ciss) (max) @ vds: | 200 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 54W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3L |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM170N30DFRectron USA |
MOSFET N-CHANNEL 30V 170A 8DFN |
|
IRFB4332PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 60A TO220AB |
|
BSC027N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 24A/100A TDSON |
|
FDS6675ARochester Electronics |
MOSFET P-CH 30V 11A 8SOIC |
|
DMP6110SFDFQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 3.5A 6UDFN |
|
NVGS5120PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 6TSOP |
|
STL45N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 18A POWERFLAT |
|
SIRA64DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
PSMN3R7-100BSEJNexperia |
MOSFET N-CH 100V 120A D2PAK |
|
IXFA72N30X3-TRLWickmann / Littelfuse |
MOSFET N-CH 300V 72A TO263 |
|
IPI60R099CPAAKSA1Rochester Electronics |
PFET, 31A I(D), 600V, 0.105OHM, |
|
PMV32UP/MI215Rochester Electronics |
P-CHANNEL MOSFET |
|
TJ60S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 60A DPAK |
