English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 120mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 12.9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 530 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 18W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7606TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A MICRO8 |
|
CSD25484F4TTexas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
DMT10H015LCG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 9.4A/34A 8DFN |
|
STFU15N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO220FP |
|
STN2NF10STMicroelectronics |
MOSFET N-CH 100V 2.4A SOT-223 |
|
FDP047N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 164A TO220-3 |
|
IRF60B217IR (Infineon Technologies) |
MOSFET N-CH 60V 60A TO220AB |
|
IRF7410TRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 16A 8SO |
|
PSMN1R9-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
IRFR9120NTRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
RD3U060CNTL1ROHM Semiconductor |
MOSFET N-CH 250V 6A TO252 |
|
RM10N30D2Rectron USA |
MOSFET N-CH 30V 10A 6PQFN |
|
IPP65R110CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 31.2A TO220-3 |
