类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.05mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 1.95V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 57 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3.504 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 141W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR9120NTRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
RD3U060CNTL1ROHM Semiconductor |
MOSFET N-CH 250V 6A TO252 |
|
RM10N30D2Rectron USA |
MOSFET N-CH 30V 10A 6PQFN |
|
IPP65R110CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 31.2A TO220-3 |
|
DMG4468LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.62A 8DFN |
|
NVMFS5C677NLT1GRochester Electronics |
MOSFET N-CH 60V 11A/36A 5DFN |
|
IPP80N06S2L-05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPSA70R1K2P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4.5A TO251-3 |
|
IRF3709STRLPBF-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
IRF634B-FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 8.1A TO220-3 |
|
STWA67N60M6STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
RD3T100CNTL1ROHM Semiconductor |
MOSFET N-CH 200V 10A TO252 |
|
FCD7N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |