English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1415 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 730mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-PQFN (2x2) |
| 包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP65R110CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 31.2A TO220-3 |
|
DMG4468LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.62A 8DFN |
|
NVMFS5C677NLT1GRochester Electronics |
MOSFET N-CH 60V 11A/36A 5DFN |
|
IPP80N06S2L-05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPSA70R1K2P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4.5A TO251-3 |
|
IRF3709STRLPBF-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
IRF634B-FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 8.1A TO220-3 |
|
STWA67N60M6STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
RD3T100CNTL1ROHM Semiconductor |
MOSFET N-CH 200V 10A TO252 |
|
FCD7N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
|
DMP3013SFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 12A PWRDI3333 |
|
FDMC86244Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2.8A/9.4A 8MLP |
|
IXTH10P60Wickmann / Littelfuse |
MOSFET P-CH 600V 10A TO247 |
