MOSFET N-CH 60V 5.6A PPAK 1212-8
PATCHCORD B10GXF CMR BLU 20F
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 26mOhm @ 5.7A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 980 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 62W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB8NM60DSTMicroelectronics |
MOSFET N-CH 600V 8A D2PAK |
|
AOTF2142LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 112A TO220F |
|
IRFP140NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO247AC |
|
MMFTN3018WDiotec Semiconductor |
MOSFET N-CH 30V 100MA SOT323 |
|
FDC637ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.2A SUPERSOT6 |
|
SIUD402ED-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 1A PPAK 0806 |
|
IPLK60R1K0PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 5.2A THIN-PAK |
|
2N6660Roving Networks / Microchip Technology |
MOSFET N-CH 60V 410MA TO39 |
|
NP60N055VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 60A TO252-3 |
|
IPW65R190CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO247-3 |
|
DMN63D8LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 380MA SOT323 |
|
AUIRF3315SRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SSM3K341TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 6A UFM |