类型 | 描述 |
---|---|
系列: | MDmesh™ II |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 8.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1330 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 125W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN3030LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9A 8SOP |
|
FDD86569-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 90A DPAK |
|
DMT6012LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.5A 6UDFN |
|
SSM3K09FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 400MA USM |
|
FDD9407-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A DPAK |
|
TK100E08N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 100A TO220 |
|
STP16NK65ZSTMicroelectronics |
MOSFET N-CH 650V 13A TO220AB |
|
SI1012-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 500MA SOT523 |
|
IPP25N06S3L-22Rochester Electronics |
MOSFET N-CH 55V 25A TO220-3 |
|
RSQ025P03TRROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT6 |
|
IXFP6N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO220AB |
|
IXTP01N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO220AB |
|
ECH8410-TL-HRochester Electronics |
MOSFET N-CH 30V 12A SOT28FL/ECH8 |