English
简体中文
N-CHANNEL POWER MOSFET
TVS DIODE 7.78V 13.4V DO204AL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7178DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
NTD3055-150T4Rochester Electronics |
MOSFET N-CH 60V 9A DPAK |
|
SPA08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-FP |
|
NTHL060N090SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 900V 46A TO247-3 |
|
STWA65N65DM2AGSTMicroelectronics |
MOSFET N-CH 650V 60A TO247 |
|
ND2012LRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
PMH550UNEHNexperia |
MOSFET N-CH 30V 770MA DFN0606-3 |
|
NTD4970NT4GRochester Electronics |
MOSFET N-CH 30V 8.5A/36A DPAK |
|
RFD16N05_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP80N08S207AKSA1Rochester Electronics |
MOSFET N-CH 75V 80A TO220-3-1 |
|
SIHG73N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 73A TO247AC |
|
IPD60R460CEATMA1Rochester Electronics |
MOSFET N-CH 600V 9.1A TO252-3 |
|
IRF2807PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 82A TO220AB |