English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 800mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.6Ohm @ 400mA, 0V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 12.7 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 312 pF @ 25 V |
| 场效应管特征: | Depletion Mode |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD14N06S2-80Rochester Electronics |
IPD14N06 - 55V-60V N-CHANNEL AUT |
|
BSS816NWH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 1.4A SOT323-3 |
|
PMXB120EPEZNexperia |
MOSFET P-CH 30V 2.4A DFN1010D-3 |
|
IPD60R600P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO252-3 |
|
BUK6218-40C,118Rochester Electronics |
PFET, 42A I(D), 40V, 0.028OHM, 1 |
|
SUP50020E-GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO220AB |
|
IPI80N06S407AKSA2Rochester Electronics |
MOSFET N-CH 60V 80A TO262-3-1 |
|
DMP4011SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 14A/74A TO252 |
|
AUIRFS8408-7PRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
SSM6J502NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6UDFNB |
|
BSZ013NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 32A/40A TSDSON |
|
AUIRFZ48NRochester Electronics |
MOSFET N-CH 55V 69A TO220AB |
|
IRFP22N60KPBFVishay / Siliconix |
MOSFET N-CH 600V 22A TO247-3 |
