English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 28mOhm @ 23A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1.89 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD3813NT4GRochester Electronics |
MOSFET N-CH 16V 9.6A/51A DPAK |
|
SSM6K202FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 2.3A ES6 |
|
STY112N65M5STMicroelectronics |
MOSFET N-CH 650V 96A MAX247 |
|
MCH6445-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4A 6MCPH |
|
MCH3374-TL-WRochester Electronics |
MOSFET P-CH 12V 3A SC70FL/MCPH3 |
|
NDS7002ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 280MA SOT-23 |
|
BUK9604-40A,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
NDD60N360U1T4GRochester Electronics |
MOSFET N-CH 600V 11A DPAK |
|
RTL020P02TRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
AOD6N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5.3A TO252 |
|
FDS6680ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.5A 8SOIC |
|
IRF7456TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A 8SO |
|
FQA10N80CRochester Electronics |
MOSFET N-CH 800V 10A TO3P |
