English
简体中文
CIR BRKR 3A 480VAC 125VDC
MOSFET N-CH 60V 280MA SOT-23
DIODE SCHOTTKY 30V 1A SOD323
FUSE BLOCK CART 600V 20A CHASSIS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 280mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 2Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 50 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300mW (Ta) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 (TO-236AB) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9604-40A,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
NDD60N360U1T4GRochester Electronics |
MOSFET N-CH 600V 11A DPAK |
|
RTL020P02TRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
AOD6N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5.3A TO252 |
|
FDS6680ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.5A 8SOIC |
|
IRF7456TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A 8SO |
|
FQA10N80CRochester Electronics |
MOSFET N-CH 800V 10A TO3P |
|
UPA2790GR-E2-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
IXTQ50N20PWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO3P |
|
TP65H035WSQATransphorm |
GANFET N-CH 650V 47.2A TO247-3 |
|
NTR0202PLT1Rochester Electronics |
MOSFET P-CH 20V 400MA SOT23-3 |
|
SPP03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSP125H6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |