English
简体中文
GANFET N-CH 650V 47.2A TO247-3
SIGNAL LINE EMI FERRITE CHIP BEA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Cascode Gallium Nitride FET) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 47.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 41mOhm @ 32A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 187W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTR0202PLT1Rochester Electronics |
MOSFET P-CH 20V 400MA SOT23-3 |
|
SPP03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSP125H6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
DMN10H170SFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.9A 6UDFN |
|
BUK9E04-30B,127Rochester Electronics |
PFET, 75A I(D), 30V, 0.0044OHM, |
|
SQJA80EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
IPB123N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 58A D2PAK |
|
R6012ANJTLROHM Semiconductor |
MOSFET N-CH 600V 12A LPTS |
|
FDPF7N50Rochester Electronics |
MOSFET N-CH 500V 7A TO220F |
|
FQAF90N08Rochester Electronics |
MOSFET N-CH 80V 56A TO3PF |
|
NTD5806NT4GRochester Electronics |
MOSFET N-CH 40V 33A DPAK |
|
BUZ73AHXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO220AB |