English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 18mOhm @ 33A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.93 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM35N30DFRectron USA |
MOSFET N-CHANNEL 30V 35A 8DFN |
|
MCH3406-TL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RD3H080SPTL1ROHM Semiconductor |
MOSFET P-CH 45V 8A TO252 |
|
RJK4532DPD-00#J2Renesas Electronics America |
MOSFET N-CH 450V 4A MP3A |
|
FDC610PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4.9A SUPERSOT6 |
|
AUIRFR8401TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 100A DPAK |
|
SI7806ADN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |
|
SIHB21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 17.4A D2PAK |
|
IPB180N03S4L-01Rochester Electronics |
IPB180N03 - 20V-40V N-CHANNEL AU |
|
RQ3E180BNTBROHM Semiconductor |
MOSFET N-CHANNEL 30V 39A 8HSMT |
|
NVMFS5C604NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A/287A 5DFN |
|
FDMS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
|
EKI10126Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 66A TO220-3 |
