类型 | 描述 |
---|---|
系列: | CoolMOS™ CE |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 2.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.4Ohm @ 2.3A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 240µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 570 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 31W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK650A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11A TO220SIS |
|
FDD6796Rochester Electronics |
MOSFET N-CH 25V 20A/40A DPAK |
|
SI3127DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.5A/13A 6TSOP |
|
SSP3N80ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMSD3P102R2Rochester Electronics |
MOSFET P-CH 20V 2.34A 8SOIC |
|
STL285N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
DMTH10H005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 140A TO220AB |
|
FCI7N60Rochester Electronics |
MOSFET N-CH 600V 7A I2PAK |
|
IRLR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
DMG2302UKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 T&R 3 |
|
IRFU5505PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A IPAK |
|
TSM60NB1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 3A TO251 |
|
AUIRFS8409Rochester Electronics |
MOSFET N-CH 40V 195A D2PAK |