English
简体中文
RES 115 OHM 0.25% 1/4W 1206
MOSFET N-CH 60V 2A MPT3
WIRE DUCT 80X40MM 2M LGTH(8) SLO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 140 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | MPT3 |
| 包/箱: | TO-243AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMA6676PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 6MICROFET |
|
TK10Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A IPAK |
|
PSMN5R3-25MLDXRochester Electronics |
PSMN5R3-25MLD - N-CHANNEL 25V, L |
|
HUF76121S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHG33N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO247AC |
|
BSS138-13-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V SOT23 T&R 10K |
|
PMN52XP115Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3J372R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 6A SOT23F |
|
IXFH220N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 220A TO247 |
|
DMS2220LFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.5A 6-DFN |
|
FCH47N60F-F133Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO247-3 |
|
IPW50R140CPFKSA1Rochester Electronics |
MOSFET N-CH 550V 23A TO247-3 |
|
IRFF9213Rochester Electronics |
MOSFET N-CH 150V 1.3A TO205AF |