English
简体中文
MOSFET N-CH 150V 1.3A TO205AF
CONN HEADER SMD 30POS 2.54MM
IC GATE DRVR HI/LOW SIDE 8SOIC
MONITOR NGR 48VDC SC FBR/RJ45
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 15W |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-205AF (TO-39) |
| 包/箱: | TO-205AF Metal Can |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOB190A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO263 |
|
IRFU9024PBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A TO251AA |
|
SCTH90N65G2V-7STMicroelectronics |
SICFET N-CH 650V 90A H2PAK-7 |
|
APT18M100SRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 18A D3PAK |
|
DMTH41M8SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI5060-8 |
|
SPP07N600S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2039EPC |
GANFET N-CH 80V 6.8A DIE |
|
IPI50R399CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A TO262-3 |
|
SFP9Z24Rochester Electronics |
MOSFET P-CH 60V 9.7A TO220-3 |
|
DMN61D8LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 470MA SOT23 |
|
APT5015BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
HUF75545S3Rochester Electronics |
MOSFET N-CH 80V 75A I2PAK |
|
IPD50R1K4CEBTMA1Rochester Electronics |
MOSFET N-CH 500V 3.1A TO252-3 |