类型 | 描述 |
---|---|
系列: | POWER MOS 8™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1000 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 700mOhm @ 9A, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4845 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 625W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D3PAK |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMTH41M8SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI5060-8 |
|
SPP07N600S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2039EPC |
GANFET N-CH 80V 6.8A DIE |
|
IPI50R399CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A TO262-3 |
|
SFP9Z24Rochester Electronics |
MOSFET P-CH 60V 9.7A TO220-3 |
|
DMN61D8LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 470MA SOT23 |
|
APT5015BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
HUF75545S3Rochester Electronics |
MOSFET N-CH 80V 75A I2PAK |
|
IPD50R1K4CEBTMA1Rochester Electronics |
MOSFET N-CH 500V 3.1A TO252-3 |
|
FCP190N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 17A TO220-3 |
|
FQP20N06TSTURochester Electronics |
MOSFET N-CH 60V 20A TO220-3 |
|
NTAT6H406NT4GRochester Electronics |
MOSFET N-CH 80V 175A ATPAK |
|
NVMFS5C410NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |