English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Ta), 17.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 45mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.76 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 225 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.14W (Ta), 22.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZVP1320FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 35MA SOT23-3 |
|
NTMFS4701NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.7A 5DFN |
|
BSC130P03LSGAUMA1Rochester Electronics |
PFET, 12A I(D), 30V, 0.013OHM, 1 |
|
IPI100P03P3L-04IR (Infineon Technologies) |
MOSFET P-CH 30V 100A TO262-3 |
|
IRLL2703IR (Infineon Technologies) |
MOSFET N-CH 30V 3.9A SOT223 |
|
IRL3715ZLIR (Infineon Technologies) |
MOSFET N-CH 20V 50A TO262 |
|
IRFR3910TRLIR (Infineon Technologies) |
MOSFET N-CH 100V 16A DPAK |
|
SI3475DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 950MA 6TSOP |
|
IXFE23N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 21A SOT227B |
|
STH52N10LF3-2AGSTMicroelectronics |
MOSFET N-CH 100V 52A H2PAK-2 |
|
EPC2018EPC |
GANFET N-CH 150V 12A DIE |
|
NTB18N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
|
MTP2P50EGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2A TO220AB |
