类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 190mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 2810 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AON6360PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 36A/85A 8DFN |
|
IXTH50N30Wickmann / Littelfuse |
MOSFET N-CH 300V 50A TO247 |
|
AO4449_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 7A 8SOIC |
|
SPI11N65C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO262-3 |
|
HAT2168HWS-ERenesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK |
|
IRFI4410ZGPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO220AB FP |
|
RDN080N25FU6ROHM Semiconductor |
MOSFET N-CH 250V 8A TO220FN |
|
SI7356ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
FDS3680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.2A 8SOIC |
|
IRFU3303IR (Infineon Technologies) |
MOSFET N-CH 30V 33A IPAK |
|
IXKH30N60C5Wickmann / Littelfuse |
MOSFET N-CH 600V 30A TO247AD |
|
SI7802DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
|
SIR878ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |